MOSFETs provide higher reliability in the harsh environments of automotive applications

In the automotive electronics industry, the environment is extremely demanding. Due to load transients and inductive field decay, a car’s battery voltage can fluctuate between -12V DC and 125V DC, especially during reverse battery conditions. These extreme variations, combined with temperature changes, exposure to external elements, and potential ESD (electrostatic discharge) from human interaction, make the operating conditions far more challenging than those in the consumer market. Automotive systems require cost-effective and highly reliable solutions. However, the harsh environment poses significant challenges for power semiconductor devices used in numerous control functions found in modern vehicles. Standard MOSFETs, for example, often lack the robustness needed to handle the frequent inductive surges and load dumps that occur in such applications. To address this issue, self-protecting MOSFETs have been developed by companies like Diodes. These devices use a monolithic design that integrates clamping and protection features, offering a more reliable, compact, and cost-effective solution for driving relays, LEDs, and other inductive loads. One example is Diodes’ DMN61D8LQ, a self-protecting MOSFET in a SOT23 package designed specifically for automotive relay applications. It includes ESD protection on the input side and active bucking on the output side, which is crucial when switching inductive loads like relays. When a relay is turned off, it generates large voltage spikes that can damage unprotected MOSFETs. The internal back-to-back Zener stack acts as an active clamp, limiting the voltage to a safe level below the MOSFET's breakdown voltage while ensuring it doesn’t trigger during normal operation. This design allows the MOSFET to absorb the inductive energy in its normal active region rather than in the reverse breakdown mode, reducing power dissipation and increasing energy handling capability. This makes the device more efficient and durable under harsh automotive conditions. For lamp drivers, Diodes’ ZXMS6004FFQ is another example of a self-protecting MOSFET. It features a fully protected topology, including overtemperature and overcurrent protection circuits. The device comes in a compact SOT23 package, which is six times smaller than the traditional SOT223 package. It also includes built-in thermal shutdown and hysteresis to prevent overheating and ensure safe operation. When a lamp is turned on, its resistance increases rapidly, leading to higher temperatures. The overcurrent protection circuit limits the drain current by detecting sudden rises in VDS and adjusting the gate drive accordingly, preventing damage and extending the lamp’s lifespan. These protection features can work independently or in combination, providing multiple layers of defense against various failure modes. For instance, even if overcurrent regulation is active, it may not prevent the temperature from eventually reaching the threshold for thermal shutdown. With integrated protection, self-protecting MOSFETs offer a reliable and cost-effective solution for managing inductive loads in automotive systems. Their compact size, enhanced reliability, and reduced system complexity make them ideal for a wide range of applications, from relay drives to lamp control.

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